Issue 39, 2011
From the journal:

Journal of Materials Chemistry

Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene†

Chengliang Wang,a   Zhixiong Liang,b   Yaling Liu,c   Xiaomu Wang,a   Ni Zhao,a   Qian Miao,*b   Wenping Hu*d  and  Jianbin Xu*a  

* Corresponding authors

a Solid State Laboratory, Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong SAR, China
E-mail: jbxu@ee.cuhk.edu.hk

b Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
E-mail: miaoqian@cuhk.edu.hk

c Laboratory for Nanomaterials, National Center for Nanoscience and Technology, Beijing, China

d Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China
E-mail: huwp@iccas.ac.cn

Abstract

Single crystals of TIPS-TAP were grown from solution using poor solvents. With gluing silver-films as source and drain electrodes, the crystals exhibited field-effect mobility up to 1.77 cm2 Vāˆ’1sāˆ’1, which is one of the highest values reported for solution-processed n-channel single crystal OFETs.

Graphical abstract: Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene

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Article information

DOI
https://doi.org/10.1039/C1JM13153B
Article type
Communication
Submitted
07 Jul 2011
Accepted
16 Aug 2011
First published
01 Sep 2011

J. Mater. Chem., 2011,21, 15201-15204

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Single crystal n-channel field effect transistors from solution-processed silylethynylated tetraazapentacene

C. Wang, Z. Liang, Y. Liu, X. Wang, N. Zhao, Q. Miao, W. Hu and J. Xu, J. Mater. Chem., 2011, 21, 15201 DOI: 10.1039/C1JM13153B

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