Issue 45, 2011

Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

Abstract

Ag2Te simultaneously shows high mobility and low thermal conductivity, however the relatively low band gap of ∼0.2 eV prevents it from achieving high thermoelectric figure of merit, zT, in the high temperature phase. In this study, the band gap of Ag2Te has been increased enabling a zT of unity by forming alloys and composites with PbTe, thereby demonstrating the importance of exploiting potentially good thermoelectrics among these small band gap semiconductors and similar materials.

Graphical abstract: Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

Article information

Article type
Paper
Submitted
10 Aug 2011
Accepted
29 Sep 2011
First published
17 Oct 2011

J. Mater. Chem., 2011,21, 18256-18260

Alloying to increase the band gap for improving thermoelectric properties of Ag2Te

Y. Pei, N. A. Heinz and G. J. Snyder, J. Mater. Chem., 2011, 21, 18256 DOI: 10.1039/C1JM13888J

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