Issue 4, 2012

Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-kpolymer insulated organic field-effect transistors

Abstract

In this study, we report the observation of quasi-ordering in spontaneously associated highly polar surface functional groups (C[triple bond, length as m-dash]N) in the high-kpolymer dielectric, cyanoethyl pullulan, and its impact on the organic field-effect transistor (OFET) characteristics. We find that the association originates from C[triple bond, length as m-dash]N⋯H–C–C[triple bond, length as m-dash]N hydrogen bonding as confirmed by XPS, NEXAFS experiments and molecular simulations. The quasi-ordered surface dipoles preferentially induce vertically well-stacked local semiconductor molecular clusters during the initial deposition process, which then promote large-area layer-by-layer growth. By maintaining sufficient quasi-ordering, high transistor performance (μ ≈ 6.5 cm2 V−1 s−1, SS ≈ 0.062 V dec−1) is obtained under low driving voltages (−3 to −5 V), while breakup of the association at higher baking temperatures leads to a dramatic drop in μ by a factor of ∼10. Our results demonstrate that local quasi-ordering of polymeric surface dipoles, which has a significant effect on the initial semiconductor molecular growth, represents a novel and sensitive factor affecting OFET characteristics.

Graphical abstract: Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-kpolymer insulated organic field-effect transistors

Article information

Article type
Paper
Submitted
06 Sep 2011
Accepted
02 Nov 2011
First published
24 Nov 2011

J. Mater. Chem., 2012,22, 1482-1488

Quasi-ordering in spontaneously associated surface dipoles: an intrinsic interfacial factor for high-kpolymer insulated organic field-effect transistors

W. Xu, F. Wang and S. Rhee, J. Mater. Chem., 2012, 22, 1482 DOI: 10.1039/C1JM14398K

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