Issue 12, 2011

A colloidal synthesis of CuInSe2, CuGaSe2 and CuIn1−xGaxSe2nanoparticles from diisopropyldiselenophosphinatometal precursors

Abstract

CuInSe2, CuGaSe2 and CuIn(1−x)GaxSe2 (CIGS) nanoparticles were synthesised from the diisopropyldiselenophosphinatometal complexes Mx[iPr2PSe2]n (M = Cu(I), In(III), Ga(III); n = 1, 3) by thermal decomposition of the precursors in HDA/TOP at 120–210 °C or 250 °C. The semiconductor nanoparticles obtained were characterized by powder X-ray diffraction (p-XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray (EDX) analysis. The diameters of the nanoparticles for CuInSe2, CuGaSe2 and CuIn0.7Ga0.3Se2 were found to be 4.9 ± 0.6 nm (at 180 °C), 13.5 ± 2.9 nm (at 250 °C) and 14 ± 2.22 nm (at 250 °C) respectively. The p-XRD patterns for the nanoparticulate samples were assigned to the corresponding ICDD patterns for tetragonal chalcopyrite phase.

Graphical abstract: A colloidal synthesis of CuInSe2, CuGaSe2 and CuIn1−xGaxSe2nanoparticles from diisopropyldiselenophosphinatometal precursors

Article information

Article type
Paper
Submitted
20 Jul 2011
Accepted
30 Sep 2011
First published
07 Nov 2011

Nanoscale, 2011,3, 5132-5139

A colloidal synthesis of CuInSe2, CuGaSe2 and CuIn1−xGaxSe2nanoparticles from diisopropyldiselenophosphinatometal precursors

S. N. Malik, S. Mahboob, N. Haider, M. A. Malik and P. O'Brien, Nanoscale, 2011, 3, 5132 DOI: 10.1039/C1NR10888C

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