Hetero-epitaxial growth of vertically-aligned TiO2 nanorods on an m-cut sapphire substrate with an (001) SnO2 buffer layer

Won-Sik Kim; Yun-Guk Jang; Dai-Hong Kim; Hong-Chan Kim; Seong-Hyeon Hong

doi:10.1039/C2CE25196E

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Hetero-epitaxial growth of vertically-aligned TiO₂nanorods on an m-cut sapphire substrate with an (001) SnO₂buffer layer†

Won-Sik Kim,^a Yun-Guk Jang,^a Dai-Hong Kim,^a Hong-Chan Kim^a and Seong-Hyeon Hong*^a

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* Corresponding authors

^a Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
E-mail: shhong@snu.ac.kr
Fax: +82-2-884-1413
Tel: +82-2-880-6273

Abstract

Vertically well-aligned rutile TiO₂ nanorods were epitaxially grown on an m-cut sapphire substrate by a hydrothermal method with an SnO₂ buffer layer deposited by PEALD. Hetero-epitaxial relationships between the TiO₂ nanorods, the SnO₂ buffer layer and the sapphire substrate were demonstrated by X-ray pole figures and high resolution transmission electron microscopy (HRTEM).

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Article information

DOI: https://doi.org/10.1039/C2CE25196E
Article type: Communication
Submitted: 12 Feb 2012
Accepted: 03 May 2012
First published: 04 May 2012

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CrystEngComm, 2012,14, 4963-4966

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Hetero-epitaxial growth of vertically-aligned TiO₂ nanorods on an m-cut sapphire substrate with an (001) SnO₂ buffer layer

W. Kim, Y. Jang, D. Kim, H. Kim and S. Hong, CrystEngComm, 2012, 14, 4963 DOI: 10.1039/C2CE25196E

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