Issue 19, 2012
From the journal:

Journal of Materials Chemistry

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy†

Liyang Yu,*ab   Xiaoran Li,*cd   Jeremy Smith,be   Steven Tierney,f   Richard Sweeney,a   B. K. Charlotte Kjellander,d   Gerwin H. Gelinck,d   Thomas D. Anthopoulosbe  and  Natalie Stingelinabg  

* Corresponding authors

a Department of Materials, Imperial College London, SW7 2AZ London, UK
E-mail: l.yu09@imperial.ac.uk
Tel: +44 (0)20 75940849

b Centre for Plastic Electronics, Imperial College London, SW7 2AZ London, UK

c Department of Chemical Engineering and Chemistry, Technische Universiteit Eindhoven, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
E-mail: x.li@tue.nl
Tel: +31 (0)40 4020495

d Holst Centre/TNO, High Tech Campus 31, 5656 AE Eindhoven, The Netherlands

e Department of Physics, Imperial College London, SW7 2AZ London, UK

f Merck Chemicals Ltd., University Parkway, Southampton SO16 7QD, UK

g FRIAS, School of Soft Matter Research, University of Freiburg, 79104 Freiburg, Germany

Abstract

We present a new soluble pentacene derivative with ethyl substitutions in the 1,13,14,22 backbone positions to modulate the solubility and film forming properties of this material compared to triisopropylsilylethynyl (TIPS) pentacene. This permits reproducible production of molecularly highly ordered structures that feature average transistor mobilities in excess of 1 cm2 Vāˆ’1 sāˆ’1 depending on crystal orientation by careful selection of casting conditions.

Graphical abstract: Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

About
Cited by
Related
Download options Please wait...

Supplementary files

Article information

DOI
https://doi.org/10.1039/C2JM30893B
Article type
Communication
Submitted
13 Feb 2012
Accepted
19 Mar 2012
First published
20 Mar 2012

J. Mater. Chem., 2012,22, 9458-9461

Permissions

Request permissions

Solution-processed small molecule transistors with low operating voltages and high grain-boundary anisotropy

L. Yu, X. Li, J. Smith, S. Tierney, R. Sweeney, B. K. C. Kjellander, G. H. Gelinck, T. D. Anthopoulos and N. Stingelin, J. Mater. Chem., 2012, 22, 9458 DOI: 10.1039/C2JM30893B

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements