Synthesis and photoresponse of novel Cu2CdSnS4 semiconductor nanorods

Yong Cui; Gang Wang; Daocheng Pan

doi:10.1039/C2JM32034G

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Synthesis and photoresponse of novel Cu₂CdSnS₄ semiconductor nanorods†

Yong Cui,^a Gang Wang*^a and Daocheng Pan*^a

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* Corresponding authors

^a State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, China
E-mail: wsu@ciac.jl.cn, pan@ciac.jl.cn

Abstract

Novel semiconductor Cu₂CdSnS₄ nanorods with a wurtzite structure have been successfully synthesized and characterized in detail. The suitable band gap of 1.4 eV and photoresponse property of Cu₂CdSnS₄ nanorods indicate that they have a high potential application in low-cost thin film solar cells.

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Article information

DOI: https://doi.org/10.1039/C2JM32034G
Article type: Communication
Submitted: 01 Apr 2012
Accepted: 18 May 2012
First published: 21 May 2012

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J. Mater. Chem., 2012,22, 12471-12473

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Synthesis and photoresponse of novel Cu₂CdSnS₄ semiconductor nanorods

Y. Cui, G. Wang and D. Pan, J. Mater. Chem., 2012, 22, 12471 DOI: 10.1039/C2JM32034G

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Journal of Materials Chemistry