Issue 3, 2012
From the journal:

Nanoscale

n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays†

Xiao-Mei Zhang,*a   Dmitri Golberg,a   Yoshio Bandoa  and  Naoki Fukata*a  

* Corresponding authors

a World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki, Japan
E-mail: ZHANG.Xiaomei@nims.go.jp, FUKATA.Naoki@nims.go.jp

Abstract

A wafer-scale, low-cost solar cell based on n-ZnO/p-Si 3D heterojunction arrays on holey Si substrates has been fabricated. This device shows a power-conversion efficiency of 1.2% and high photosensitivity. The present n-ZnO/p-Si heterojunction architectures are envisaged as potentially valuable candidates for next-generation photovoltaics.

Graphical abstract: n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

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Article information

DOI
https://doi.org/10.1039/C2NR11752E
Article type
Communication
Submitted
16 Nov 2011
Accepted
05 Dec 2011
First published
09 Dec 2011

Nanoscale, 2012,4, 737-741

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n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

X. Zhang, D. Golberg, Y. Bando and N. Fukata, Nanoscale, 2012, 4, 737 DOI: 10.1039/C2NR11752E

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