Ion doping of graphene for high-efficiency heterojunction solar cells

Xinming Li; Dan Xie; Hyesung Park; Miao Zhu; Tingying Helen Zeng; Kunlin Wang; Jinquan Wei; Dehai Wu; Jing Kong; Hongwei Zhu

doi:10.1039/C2NR33795A

Ion doping of graphene for high-efficiency heterojunction solar cells

Xinming Li,^a Dan Xie,^b Hyesung Park,^c Miao Zhu,^ae Tingying Helen Zeng,^d Kunlin Wang,^a Jinquan Wei,^a Dehai Wu,^a Jing Kong^cd and Hongwei Zhu*^ae

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* Corresponding authors

^a School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China

^b Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

^c Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

^d Center for Excitonics, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA

^e Center for Nano and Micro Mechanics (CNMM), Tsinghua University, Beijing 100084, P. R. China
E-mail: hongweizhu@tsinghua.edu.cn

Abstract

We demonstrated the p-type chemical doping by chlorine and nitrate anions to enhance the Schottky junction in the solar cell. Nitrate ions were found to be more effective for reducing the sheet resistance and enlarging the work function of graphene for effective charge separation and transport, and the efficiency was increased to 9.2% by a factor of 1.68 under AM 1.5 illumination.

Nanoscale

Ion doping of graphene for high-efficiency heterojunction solar cells

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Ion doping of graphene for high-efficiency heterojunction solar cells

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