Issue 19, 2012

Magnetoresistive field-effect transistors based on organic donor–acceptor blends

Abstract

We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2′,7,7′-tetrakis-(N,N-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states. These states are responsible for the magnetoresistance effect in Spiro-TTB–HAT-CN blends.

Graphical abstract: Magnetoresistive field-effect transistors based on organic donor–acceptor blends

Supplementary files

Article information

Article type
Communication
Submitted
10 May 2012
Accepted
25 Jun 2012
First published
27 Jun 2012

RSC Adv., 2012,2, 7388-7390

Magnetoresistive field-effect transistors based on organic donor–acceptor blends

T. Reichert, T. P. I. Saragi and J. Salbeck, RSC Adv., 2012, 2, 7388 DOI: 10.1039/C2RA20901B

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