Issue 4, 2013

Synthesis, photoconductivity and self-assembly of wurtzite phase Cu2CdxZn1−xSnS4 nanorods

Abstract

Cu2CdxZn1−xSnS4 is a likely interfacial layer in Cu2ZnSnS4/CdS based thin film solar cells. It is thus important to investigate and understand the photoresponse behaviour of Cu2CdxZn1−xSnS4 in order to further improve the cell efficiency and to develop alternative buffer layer materials containing no heavy metals. We have synthesized monodispersed wurtzite phase Cu2CdxZn1−xSnS4 nanorods over the entire composition range by a facile solution based method and observed a systematic increase of the nanorod aspect ratio with increasing cadmium concentration. On the other hand, the optical band gap of Cu2CdxZn1−xSnS4 nanorods decreases linearly from 1.56 eV (x = 0) to 1.39 eV (x = 1). Smooth, uniform and dense nanorod thin films have been coated on Mo-coated glass substrates using nanorod dispersions as nano-inks by a spray deposition method. Current (I)–Voltage (V) measurements of the annealed films show the highest photoresponse for Cu2Cd0.75Zn0.25SnS4 composition. We further demonstrate that the dipole–dipole interaction between the solvent and the nanorods can be manipulated for long-range vertical self-assembly of the nanorods for the different compositions. This simple method is promising for large area coating of the absorber layer in thin film solar cells and can be extended for use with other technologically important materials.

Graphical abstract: Synthesis, photoconductivity and self-assembly of wurtzite phase Cu2CdxZn1−xSnS4 nanorods

Supplementary files

Article information

Article type
Paper
Submitted
12 Oct 2012
Accepted
14 Nov 2012
First published
15 Nov 2012

RSC Adv., 2013,3, 1186-1193

Synthesis, photoconductivity and self-assembly of wurtzite phase Cu2CdxZn1−xSnS4 nanorods

K. Ramasamy, X. Zhang, R. D. Bennett and A. Gupta, RSC Adv., 2013, 3, 1186 DOI: 10.1039/C2RA22503D

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