Issue 27, 2013
From the journal:

Physical Chemistry Chemical Physics

Mg composition dependent band offsets of Zn1−xMgxO/ZnO heterojunctions†

H. H. Zhang,a   X. H. Pan,*a   B. Lu,*a   J. Y. Huang,a   P. Ding,a   W. Chen,a   H. P. He,a   J. G. Lu,a   S. S. Chena  and  Z. Z. Ye*a  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: panxinhua@zju.edu.cn, binlu@zju.edu.cn, yezz@zju.edu.cn
Fax: +86 571 87952124
Tel: +86 571 87952187

Abstract

The valence band offsets (ΔEV) of Zn1−xMgxO/ZnO heterojunctions grown by plasma-assisted molecular beam epitaxy were measured by photoelectron spectroscopy. From the directly obtained ΔEV values, the related conduction band offsets (ΔEC) were deduced. All the Zn1−xMgxO/ZnO heterojunctions exhibit a type-I band alignment with the ΔEC/ΔEV estimated to be 1.5, 1.8, 2.0 for x = 0.10, 0.15 and 0.20, respectively. The band offsets of Zn1−xMgxO/ZnO heterojunctions depend on Mg composition. The accurate determination of energy band alignment of Zn1−xMgxO/ZnO is helpful for designing ZnO based optoelectronic devices.

Graphical abstract: Mg composition dependent band offsets of Zn1−xMgxO/ZnO heterojunctions

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Article information

DOI
https://doi.org/10.1039/C3CP51156A
Article type
Communication
Submitted
16 Mar 2013
Accepted
21 May 2013
First published
22 May 2013

Phys. Chem. Chem. Phys., 2013,15, 11231-11235

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Mg composition dependent band offsets of Zn1−xMgxO/ZnO heterojunctions

H. H. Zhang, X. H. Pan, B. Lu, J. Y. Huang, P. Ding, W. Chen, H. P. He, J. G. Lu, S. S. Chen and Z. Z. Ye, Phys. Chem. Chem. Phys., 2013, 15, 11231 DOI: 10.1039/C3CP51156A

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