Issue 13, 2013

Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature

Abstract

In this letter, the different scattering mechanisms of triphenylene-derived graphene on conventional SiO2/Si substrates and octadecyltrimethoxysilane (OTMS) self-assembled monolayer (SAM) functionalized SiO2/Si substrates were systematically studied at room temperature. In comparison with the devices on conventional SiO2/Si substrates, triphenylene-derived GFETs with OTMS–SAM modified SiO2/Si substrate exhibit the marked carrier-density-dependent field-effect mobility. Quantitative analyses reveal that at ambient temperature, the predominant scattering sources affect the carrier mean free path for graphene devices on bare SiO2 substrates and for those on OTMS passivated SiO2 substrates are charged impurity induced long-range scattering (∼5.34 × 1011 cm−2 in carrier density) and resonant scattering (short-range scattering ∼9.77 × 1010 cm−2 carrier in density), respectively. Our findings elucidate the underlying dominant factors for achieving significantly improved device performance of GFETs at room temperature.

Graphical abstract: Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature

Supplementary files

Article information

Article type
Paper
Submitted
25 Feb 2013
Accepted
09 Apr 2013
First published
18 Apr 2013

Nanoscale, 2013,5, 5784-5793

Quantitative determination of scattering mechanism in large-area graphene on conventional and SAM-functionalized substrates at room temperature

K. Chen, X. Wan, D. Liu, Z. Kang, W. Xie, J. Chen, Q. Miao and J. Xu, Nanoscale, 2013, 5, 5784 DOI: 10.1039/C3NR00972F

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