Issue 18, 2013

Synthesis of p-type GaN nanowires

Abstract

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg–H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor–liquid–solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p–n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Graphical abstract: Synthesis of p-type GaN nanowires

Supplementary files

Article information

Article type
Paper
Submitted
03 Apr 2013
Accepted
12 Jul 2013
First published
29 Jul 2013

Nanoscale, 2013,5, 8550-8554

Synthesis of p-type GaN nanowires

S. W. Kim, Y. H. Park, I. Kim, T. Park, B. W. Kwon, W. K. Choi and H. Choi, Nanoscale, 2013, 5, 8550 DOI: 10.1039/C3NR01664A

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