Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

Abstract

We present the temperature-dependent carrier mobility of atomically thin MoS₂ field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO₂ substrates. Our results reveal distinct weak temperature dependence of the MoS₂ devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS₂ devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS₂ devices.