Issue 2, 2014
From the journal:

Nanoscale

Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires

Kohei Matsubara,†ab   Siya Huang,†a   Mitsumasa Iwamotob  and  Wei Pan*a  

* Corresponding authors

a State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
E-mail: panw@tsinghua.edu.cn

b Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan

Abstract

Li doped NiO nanowires with a diameter smaller than 100 nm were synthesized by electrospinning. The nanowires exhibit p-type characteristics with improved electrical conductivity through Li doping. Moreover, an enhanced gating effect was obtained in Li–NiO-nanowire-based field effect transistors (FETs), which hold great potential in transparent optoelectronics.

Graphical abstract: Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires

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Article information

DOI
https://doi.org/10.1039/C3NR04953A
Article type
Communication
Submitted
16 Sep 2013
Accepted
29 Oct 2013
First published
01 Nov 2013

Nanoscale, 2014,6, 688-692

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Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires

K. Matsubara, S. Huang, M. Iwamoto and W. Pan, Nanoscale, 2014, 6, 688 DOI: 10.1039/C3NR04953A

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