Issue 5, 2014

A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices

Abstract

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy, we studied the nature of electron transport in the active volume of memristive junctions showing that both the ON and OFF states correspond to truly nanometer-scale, highly transparent metallic channels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale memory cells which can be switched by nanosecond voltage pulses.

Graphical abstract: A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices

Supplementary files

Article information

Article type
Communication
Submitted
24 Oct 2013
Accepted
04 Dec 2013
First published
06 Dec 2013
This article is Open Access
Creative Commons BY license

Nanoscale, 2014,6, 2613-2617

Author version available

A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices

A. Geresdi, M. Csontos, A. Gubicza, A. Halbritter and G. Mihály, Nanoscale, 2014, 6, 2613 DOI: 10.1039/C3NR05682A

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