Issue 10, 2014

MoS2 atomic layers with artificial active edge sites as transparent counter electrodes for improved performance of dye-sensitized solar cells

Abstract

A novel MoS2 transparent counter electrode for dye-sensitized solar cells is reported. In order to enhance the catalytic activity of the electrode, active edge sites are created artificially by patterning holes on MoS2 atomic layers. Electrochemical analysis shows that the electrochemical activity is significantly improved after the patterning of holes. The photon-to-electron efficiency of the dye-sensitized solar cells based on MoS2 atomic layer counter electrodes is increased remarkably from 2% to 5.8% after the hole patterning.

Graphical abstract: MoS2 atomic layers with artificial active edge sites as transparent counter electrodes for improved performance of dye-sensitized solar cells

Article information

Article type
Paper
Submitted
10 Nov 2013
Accepted
19 Feb 2014
First published
21 Feb 2014

Nanoscale, 2014,6, 5279-5283

MoS2 atomic layers with artificial active edge sites as transparent counter electrodes for improved performance of dye-sensitized solar cells

J. Zhang, S. Najmaei, H. Lin and J. Lou, Nanoscale, 2014, 6, 5279 DOI: 10.1039/C3NR05979K

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