Issue 12, 2014

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

Abstract

Fundamental studies and applications of 2-dimensional (2D) graphene may be deepened and broadened via combining graphene sheets with various functional materials, which have been extended from the traditional insulator of SiO2 to a versatile range of dielectrics, semiconductors and metals, as well as organic compounds. Among them, ferroelectric materials have received much attention due to their unique ferroelectric polarization. As a result, many attractive characteristics can be shown in graphene/ferroelectric hybrid systems. On the other hand, graphene can be integrated with conventional semiconductors and some newly-discovered 2D layered materials to form distinct Schottky junctions, yielding fascinating behaviours and exhibiting the potential for various applications in future functional devices. This review article is an attempt to illustrate the most recent progress in the fabrication, operation principle, characterization, and promising applications of graphene-based hybrid structures combined with various functional materials, ranging from ferroelectrics to semiconductors. We focus on mechanically exfoliated and chemical-vapor-deposited graphene sheets integrated in numerous advanced devices. Some typical hybrid structures have been highlighted, aiming at potential applications in non-volatile memories, transparent flexible electrodes, solar cells, photodetectors, and so on.

Graphical abstract: Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

Article information

Article type
Review Article
Submitted
31 Dec 2013
Accepted
07 Feb 2014
First published
25 Feb 2014

Nanoscale, 2014,6, 6346-6362

Author version available

Graphene-based hybrid structures combined with functional materials of ferroelectrics and semiconductors

W. Jie and J. Hao, Nanoscale, 2014, 6, 6346 DOI: 10.1039/C3NR06918D

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