Issue 30, 2013

Highly-improved performance of TiO2nanocrystal based quantum dot light emitting diodes

Abstract

We have fabricated quantum dot based light emitting diodes (QLEDs) with 3 nm-titanium oxide (TiO2) nanocrystals used as the electron transport layer (ETL). Different thicknesses of TiO2 films were fabricated under the post-annealing conditions (at 100 °C) from 30 min to 120 min, leading to significantly enhanced electrical characteristics and increased luminance intensity of the QLED device due to better crystallization of TiO2 films. The blue shift of the electroluminescence (EL) peak was observed as evidence of the enhanced electron injection from the TiO2 film to the quantum dot emission layer. As a result, the highly stable QLED device was fabricated and the EL intensity was improved from 25 cd m−2 to 390 cd m−2 with a 49% decrease in the turn-on voltage.

Graphical abstract: Highly-improved performance of TiO2 nanocrystal based quantum dot light emitting diodes

Article information

Article type
Communication
Submitted
26 Apr 2013
Accepted
05 Jun 2013
First published
05 Jun 2013

RSC Adv., 2013,3, 12104-12108

Highly-improved performance of TiO2 nanocrystal based quantum dot light emitting diodes

K. Qasim, J. Chen, Z. Li, W. Lei and J. Xa, RSC Adv., 2013, 3, 12104 DOI: 10.1039/C3RA42055H

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