Issue 20, 2013

Nonvolatile resistive memory devices based on Ag

Abstract

Ag-based nonvolatile resistive memory devices are fabricated with the help of a simple soft-chemical process, which can transform Ag film into Ag2S/Ag nano-flake film. A very high ON/OFF ratio of 2.35 × 108 and satisfactory retention time of larger than 104 s are achieved. The redox reaction Ag+ (Ag2S) + e → Ag at the Ag2S/Ag interface induced the filamentary conduction that is responsible for the observed memory effects.

Graphical abstract: Nonvolatile resistive memory devices based on Ag

Supplementary files

Article information

Article type
Communication
Submitted
01 Mar 2013
Accepted
03 Apr 2013
First published
04 Apr 2013

J. Mater. Chem. C, 2013,1, 3282-3286

Nonvolatile resistive memory devices based on Ag

Z. Jin, G. Liu and J. Wang, J. Mater. Chem. C, 2013, 1, 3282 DOI: 10.1039/C3TC30387J

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