Issue 47, 2013

Tunable trap depth in Zn(Ga1−xAlx)2O4:Cr,Bi red persistent phosphors: considerations of high-temperature persistent luminescence and photostimulated persistent luminescence

Abstract

Thermoluminescence peaks for Cr3+ emissions shift to higher temperature due to the partial substitution of Al for Ga sites in ZnGa2O4:Cr,Bi phosphors, which indicates that the electron traps responsible for the red persistent luminescence are tuned to deeper levels by Al-doping. Al-containing phosphors with deeper traps showed a lower persistent luminescence intensity than Al-free samples at 20 °C because the ambient thermal energy is too low to release trapped electrons in deeper levels; however, the Al-containing persistent phosphors perform better at 80 °C with greater thermal energy. At 20 °C, the trapped electrons in the Al-containing phosphors can be efficiently released with the assistance of additional NIR photostimulation. NIR photostimulated red persistent luminescence (NIR-to-red mode) as presented in the Al-containing ZnGa2O4:Cr,Bi phosphors could be a promising technique for new in vivo imaging systems.

Graphical abstract: Tunable trap depth in Zn(Ga1−xAlx)2O4:Cr,Bi red persistent phosphors: considerations of high-temperature persistent luminescence and photostimulated persistent luminescence

Supplementary files

Article information

Article type
Paper
Submitted
26 Jul 2013
Accepted
03 Oct 2013
First published
07 Oct 2013

J. Mater. Chem. C, 2013,1, 7849-7855

Tunable trap depth in Zn(Ga1−xAlx)2O4:Cr,Bi red persistent phosphors: considerations of high-temperature persistent luminescence and photostimulated persistent luminescence

Y. Zhuang, J. Ueda and S. Tanabe, J. Mater. Chem. C, 2013, 1, 7849 DOI: 10.1039/C3TC31462F

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