Issue 48, 2013
From the journal:

Journal of Materials Chemistry C

High performance inverted organic solar cells with solution processed Ga-doped ZnO as an interfacial electron transport layer†

M. Thambidurai,‡*a   Jun Young Kim,‡a   Jiyun Song,a   Youngjun Ko,a   Hyung-jun Song,a   Chan-mo Kang,a   N. Muthukumarasamy,b   Dhayalan Velauthapillaic  and  Changhee Lee*a  

* Corresponding authors

a Department of Electrical and Computer Engineering, Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul 151-744, Republic of Korea
E-mail: chlee7@snu.ac.kr, phy_thambi@rediffmail.com
Fax: +82-2877-6668
Tel: +82-2880-9093

b Department of Physics, Coimbatore Institute of Technology, Coimbatore 641 014, India
E-mail: vishnukutty2002@yahoo.co.in
Fax: +91-0422-2575020
Tel: +91-94429-54202

c Department of Engineering, University College of Bergen, Bergen, Norway
E-mail: Dhayalan.Velauthapillai@hib.no
Fax: +4755587030
Tel: +4755587711

Abstract

We demonstrate solution-processed Ga-doped ZnO incorporated as an interfacial electron transport layer into inverted organic solar cells with active layers comprising either PCDTBT or PTB7 mixed with PC71BM. The 5.03 at% Ga-doped ZnO showed the best efficiencies of 5.56% and 7.34% for PCDTBT and PTB7 polymers respectively.

Graphical abstract: High performance inverted organic solar cells with solution processed Ga-doped ZnO as an interfacial electron transport layer

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Article information

DOI
https://doi.org/10.1039/C3TC31650E
Article type
Paper
Submitted
21 Aug 2013
Accepted
18 Oct 2013
First published
18 Oct 2013

J. Mater. Chem. C, 2013,1, 8161-8166

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High performance inverted organic solar cells with solution processed Ga-doped ZnO as an interfacial electron transport layer

M. Thambidurai, J. Y. Kim, J. Song, Y. Ko, H. Song, C. Kang, N. Muthukumarasamy, D. Velauthapillai and C. Lee, J. Mater. Chem. C, 2013, 1, 8161 DOI: 10.1039/C3TC31650E

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