Oxygen etching of thick MoS2 films

Robert Ionescu; Aaron George; Isaac Ruiz; Zachary Favors; Zafer Mutlu; Chueh Liu; Kazi Ahmed; Ryan Wu; Jong S. Jeong; Lauro Zavala; K. Andre Mkhoyan; Mihri Ozkan; Cengiz S. Ozkan

doi:10.1039/C4CC03911D

Oxygen etching of thick MoS₂ films

Robert Ionescu,^a Aaron George,^b Isaac Ruiz,^c Zachary Favors,^b Zafer Mutlu,^b Chueh Liu,^d Kazi Ahmed,^c Ryan Wu,^e Jong S. Jeong,^e Lauro Zavala,^f K. Andre Mkhoyan,^e Mihri Ozkan^acd and Cengiz S. Ozkan*^bf

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* Corresponding authors

^a Department of Chemistry, University of California, Riverside, CA 92521, USA

^b Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA

^c Department of Electrical Engineering, University of California, Riverside, CA 92521, USA

^d Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA

^e Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA

^f Department of Mechanical Engineering, University of California, Riverside, CA 92521, USA

Abstract

Oxygen annealing of thick MoS₂ films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.

Chemical Communications

Oxygen etching of thick MoS₂ films

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Oxygen etching of thick MoS₂ films

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