Sequential Bi–C bond activation reactions of BiEt3via insertion reactions of RE {R = HC[C(Me)N(2,6-i-Pr2C6H3)]2; E = Al, Ga, In}

Abstract

Two of the Bi–C bonds of BiEt₃ are sequentially activated by mono-valent RM {R = HC[C(Me)N(2,6-i-Pr₂C₆H₃)]₂; M = Al, Ga, In}. The first Bi–C bond activation leads to the formation of insertion complexes, [RMEt(BiEt₂)] (M = Al 1; Ga 2; In 3), whereas the consecutive second activation proceeds through a reductive elimination of RMEt₂ (M = Al 4, Ga 5), elemental Bi and BiEt₃.