Issue 34, 2014

Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth

Abstract

A coherent InP/Si heterojunction with an atomically abrupt interface and low defect density is obtained by conducting corrugated epitaxial lateral overgrowth of InP on an engineered (001) Si substrate, with InP seed mesa oriented at 30° from the [110] direction in a hydride vapour phase epitaxy reactor. Ohmic conduction across the InP/Si heterojunction can be achieved.

Graphical abstract: Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth

Article information

Article type
Communication
Submitted
21 Apr 2014
Accepted
24 Jun 2014
First published
02 Jul 2014

CrystEngComm, 2014,16, 7889-7893

Realization of an atomically abrupt InP/Si heterojunction via corrugated epitaxial lateral overgrowth

Y. Sun, H. Kataria, W. Metaferia and S. Lourdudoss, CrystEngComm, 2014, 16, 7889 DOI: 10.1039/C4CE00844H

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