Issue 47, 2014

Functional spinel oxide heterostructures on silicon

Abstract

Novel spinel heteroepitaxial structures composed of ferrimagnetic spinel CoFe2O4 (CFO) and ultrathin γ-Al2O3 buffer layers are integrated on Si(111). Flat (111)-oriented epitaxial CFO films with only two in-plane domains induced by γ-Al2O3 are ferromagnetic at room temperature with high saturation magnetization. These results open the prospect of using functional spinel layers on silicon for monolithic devices.

Graphical abstract: Functional spinel oxide heterostructures on silicon

Supplementary files

Article information

Article type
Communication
Submitted
03 Sep 2014
Accepted
13 Oct 2014
First published
13 Oct 2014

CrystEngComm, 2014,16, 10741-10745

Functional spinel oxide heterostructures on silicon

R. Bachelet, P. de Coux, B. Warot-Fonrose, V. Skumryev, G. Niu, B. Vilquin, G. Saint-Girons and F. Sánchez, CrystEngComm, 2014, 16, 10741 DOI: 10.1039/C4CE01817F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements