Raman spectroscopy studies of dopant activation and free electron density of In0.53Ga0.47As via sulfur monolayer doping

Kenneth R. Kort; P. Y. Hung; Patrick D. Lysaght; Wei-Yip Loh; Gennadi Bersuker; Sarbajit Banerjee

doi:10.1039/C4CP00111G

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Raman spectroscopy studies of dopant activation and free electron density of In_0.53Ga_0.47As via sulfur monolayer doping†

Kenneth R. Kort,^a P. Y. Hung,^b Patrick D. Lysaght,^b Wei-Yip Loh,^b Gennadi Bersuker^b and Sarbajit Banerjee*^a

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* Corresponding authors

^a Department of Chemistry and the New York State Center of Excellence in Materials Informatics, University at Buffalo, The State University of New York, Buffalo, NY, USA
E-mail: sb244@buffalo.edu

^b Front-End Processes Division, SEMATECH, 257 Fuller Rd, Suite 2200, Albany, New York, USA

Abstract

We present a Raman spectroscopy study of electron–phonon coupling in In_0.53Ga_0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm⁻¹ shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.

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Article information

DOI: https://doi.org/10.1039/C4CP00111G
Article type: Communication
Submitted: 09 Jan 2014
Accepted: 12 Feb 2014
First published: 13 Feb 2014

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Phys. Chem. Chem. Phys., 2014,16, 6539-6543

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Raman spectroscopy studies of dopant activation and free electron density of In_0.53Ga_0.47As via sulfur monolayer doping

K. R. Kort, P. Y. Hung, P. D. Lysaght, W. Loh, G. Bersuker and S. Banerjee, Phys. Chem. Chem. Phys., 2014, 16, 6539 DOI: 10.1039/C4CP00111G

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