Issue 9, 2015

Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline

Abstract

As structural analogues of graphene but with a sizeable band gap, monolayers of group-VIB transition metal dichalcogenides (MX2, M = Mo, W; X = S, Se, Te, etc.) have emerged as the ideal two dimensional prototype for exploring fundamental issues in physics such as valley polarization, and for engineering a wide range of nanoelectronic, optoelectronic and photocatalytic applications. Recently, chemical vapour deposition (CVD) was introduced as a more efficient preparation method than traditional chemical or physical exfoliation options, and has allowed for the successful synthesis of large-area MX2 monolayers possessing a large domain size, high thickness uniformity and continuity, and satisfactory crystal quality. This tutorial review therefore focuses on introducing the more recent advances in the CVD growth of MX2 (MoS2, WS2, MoS2(1−x)Se2xetc.) monolayers via the sulphurisation/decomposition of pre-deposited metal-based precursors, or the one-step reaction and deposition of gaseous metal and chalcogen feedstocks. Differences in growth behaviour caused by commonly used amorphous SiO2/Si, and newly adopted insulating single crystal substrates such as sapphire, mica and SrTiO3, are also comparatively presented. Also discussed are the essential parameters that influence the growth of MX2, such as the temperature, the source–substrate distance and the composition of the carrier gas (Ar/H2). Finally, an assessment is provided for viable future pathways for fine-tuning of the domain size and orientation, thickness uniformity, and the bandgap of MX2 and its alloys.

Graphical abstract: Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline

Article information

Article type
Tutorial Review
Submitted
29 Jul 2014
First published
26 Sep 2014

Chem. Soc. Rev., 2015,44, 2587-2602

Author version available

Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline

Q. Ji, Y. Zhang, Y. Zhang and Z. Liu, Chem. Soc. Rev., 2015, 44, 2587 DOI: 10.1039/C4CS00258J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements