Issue 18, 2014

Atomic layer deposition of a MoS2 film

Abstract

A mono- to multilayer thick MoS2 film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS2 film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl5 and H2S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

Graphical abstract: Atomic layer deposition of a MoS2 film

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
06 May 2014
Accepted
30 Jun 2014
First published
03 Jul 2014

Nanoscale, 2014,6, 10584-10588

Author version available

Atomic layer deposition of a MoS2 film

L. K. Tan, B. Liu, J. H. Teng, S. Guo, H. Y. Low and K. P. Loh, Nanoscale, 2014, 6, 10584 DOI: 10.1039/C4NR02451F

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