Issue 22, 2014

Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling

Abstract

Topological defects, such as point defects, dislocations and grain boundaries, have a dramatic influence on the chemical and physical properties of large-scale graphene grown by chemical vapor deposition (CVD) method. Here we demonstrate the Raman visualization of polycrystalline structures in an isotopically modified CVD graphene. By means of the reversible reaction of methane on a copper catalyst, the etching of 12C-lattice and surface deposition of 13C-atoms occur in CVD graphene by sequentially introducing hydrogen and isotopic methane after standard growth of graphene with full monolayer coverage. Spatial Raman spectroscopic mapping on labeled graphene reveals pronounced network-like 13C-rich regions, which are further identified to exist along the grain boundaries of graphene by low-energy electron microscopy. The structural defects inside the graphene grains are also targeted in the isotope labeling process. Our work opens a new way to investigate multiple grain structures in CVD graphene with a simple spectroscopic technique.

Graphical abstract: Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling

Supplementary files

Article information

Article type
Paper
Submitted
09 Jul 2014
Accepted
15 Sep 2014
First published
17 Sep 2014

Nanoscale, 2014,6, 13838-13844

Raman spectroscopic investigation of polycrystalline structures of CVD-grown graphene by isotope labeling

S. Wang, S. Suzuki and H. Hibino, Nanoscale, 2014, 6, 13838 DOI: 10.1039/C4NR03824J

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