Issue 24, 2014

How good can CVD-grown monolayer graphene be?

Abstract

Chemical vapor deposition (CVD) is considered the most promising method for pushing graphene into commercial products. However, CVD grown graphene is usually of low quality. In this work we explore how good can CVD-derived monolayer graphene be. Through the combinational optimization of the main processes of growth, transfer, device fabrication and measurements, we show that the optimized CVD graphene can present performance comparable to mechanical exfoliated ones: in particular, high carrier mobility at room temperature on the Si/SiO2 substrate, perfect electron–hole symmetry and excellent uniformity (the mobility ranged from 5000 to 12 000 cm2 V−1 s−1 with an average mobility of ∼8800 cm2 V−1 s−1 and 50% were higher than 10 000 cm2 V−1 s−1). In addition we found that the adsorbed oxygen and water molecules on graphene lead to p-type doping in graphene, and transferred charges bring charged impurity scattering to the transporting carriers in the graphene channel. It is therefore necessary to carry out electrical measurements under vacuum to obtain high intrinsic carrier mobility CVD grown graphene.

Graphical abstract: How good can CVD-grown monolayer graphene be?

Article information

Article type
Paper
Submitted
27 Sep 2014
Accepted
25 Oct 2014
First published
30 Oct 2014

Nanoscale, 2014,6, 15255-15261

How good can CVD-grown monolayer graphene be?

B. Chen, H. Huang, X. Ma, L. Huang, Z. Zhang and L. Peng, Nanoscale, 2014, 6, 15255 DOI: 10.1039/C4NR05664G

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