Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition

Abstract

Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C. All films were characterised by X-ray diffraction (XRD), wavelength dispersive X-ray spectroscopy (WDX), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV/Vis/Near IR spectroscopy. The films were 300–350 nm thick, crystalline and displayed high transparency at 550 nm (80–90%). The co-doped film consisted of 1 at.% fluorine and 2 at.% aluminium, exhibiting a charge carrier concentration and a charge carrier mobility of 3.47 × 10²⁰ cm⁻³ and 9.7 cm² V⁻¹ s⁻¹, respectively. The band gap of the co-doped film was found to be 3.7 eV and the plasma edge crossover was ca. 1800 nm. This film had a highly structured morphology in comparison to the un-doped and single doped ZnO films for transparent conducting oxide applications.