Individual HfS3 nanobelt for field-effect transistor and high performance visible-light detector

Abstract

HfS₃ nanobelts were directly synthesized via a simple chemical vapor transport method. A field-effect transistor and photodetector was further fabricated based on an individual HfS₃ nanobelt, and its electrical and optoelectronic properties were evaluated. The output characteristic curves of the FET revealed a typical p-type semiconducting behavior. The photodetector has an ultralow dark current (0.04 pA) and a large on/off ratio (337.5) illuminated by 405 nm light with 1.2 mW cm⁻². It demonstrated excellent stability and sensitivity to 405 nm light. The results suggest that the HfS₃ nanobelts are promising for application in nanoscale electronic and optoelectronic devices. The research will play a positive role in nanodevice research of one-dimensional transition-metal trichalcogenide nanostructure.