Superior characteristics of graphene field effect transistor enclosed by chemical-vapor-deposition-grown hexagonal boron nitride

Abstract

We report the characterization of high-quality chemical-vapor-deposition (CVD)-grown graphene devices on CVD-grown hexagonal boron nitride (h-BN). Electrical transport measurements and Raman spectroscopy showed that the graphene devices on the h-BN film presented superior carrier mobility and suppression of charged impurities. The hole mobility of graphene on h-BN and h-BN/graphene/h-BN at 4.2 K was 18 000 and 20 000 cm² V⁻¹ s⁻¹, respectively. The CVD-grown h-BN not only provided an ideal substrate for graphene but also provided a protection layer against unwanted doping by O₂. The h-BN/graphene/h-BN sandwich structure offers a significant advantage for the manufacturing of stable graphene electronic devices.