Issue 100, 2015
From the journal:

Chemical Communications

A mercury(ii) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine†

Tsuyoshi Minami,*a   Yui Sasaki,a   Tsukuru Minamiki,a   Petr Koutnik,b   Pavel Anzenbacher, Jr.b  and  Shizuo Tokitoa  

* Corresponding authors

a Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
E-mail: tminami@yz.yamagata-u.ac.jp
Fax: +81-238-26-3788
Tel: +81-238-26-3594

b Department of Chemistry and Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, USA

Abstract

Herein, we report an organic field effect transistor (OFET) with an extended-gate modified by an artificial receptor for the detection of mercury(II) ions (Hg2+) in water. The sensor device is easy to fabricate, reusable, disposable, and portable. Thus OFET sensors could be applied for low-cost on-site detection of Hg2+.

Graphical abstract: A mercury(ii) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

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Article information

DOI
https://doi.org/10.1039/C5CC07893H
Article type
Communication
Submitted
21 Sep 2015
Accepted
06 Oct 2015
First published
08 Oct 2015

Chem. Commun., 2015,51, 17666-17668

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A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by dipicolylamine

T. Minami, Y. Sasaki, T. Minamiki, P. Koutnik, P. Anzenbacher and S. Tokito, Chem. Commun., 2015, 51, 17666 DOI: 10.1039/C5CC07893H

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