Issue 4, 2016

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

Abstract

Our work is related to the liquid phase epitaxy-based development of new scintillating screens for high-resolution X-ray imaging. We successfully grew undoped and Tb, Eu and Ce-doped GdAlO3 as well as GdxLu1−xAlO3 single crystalline films on YAlO3 substrates. We studied crystallization conditions as a function of melt composition, growth temperature and lattice mismatch between the film and the substrate. The film composition was measured by using an electron microprobe and the morphology of the film surface was studied by scanning electron microscopy. X-Ray diffraction was used to characterize the crystal structure and the mismatch between the film and the substrate. In addition, the light yield of the Eu3+-doped films, as well as the obtained spatial resolution show that GdxLu1−xAlO3 may advantageously compete with existing thin film scintillators in particular energy ranges.

Graphical abstract: Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

Article information

Article type
Paper
Submitted
01 Oct 2015
Accepted
10 Dec 2015
First published
11 Dec 2015

CrystEngComm, 2016,18, 608-615

Author version available

Epitaxial growth of gadolinium and lutetium-based aluminum perovskite thin films for X-ray micro-imaging applications

F. Riva, P.-A. Douissard, T. Martin, F. Carlà, Y. Zorenko and C. Dujardin, CrystEngComm, 2016, 18, 608 DOI: 10.1039/C5CE01938A

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