Issue 11, 2016

Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

Abstract

A comprehensive Raman resonance scattering study of ZnSxSe1−x (ZnSSe) solid solutions over the whole compositional range (0 ≤ x ≤ 1) has been carried out using 325 and 455 nm excitation wavelengths. The Raman scattering intensities of LO ZnS-like and ZnSe-like phonon modes, corresponding to pure S and Se vibrations, respectively, are revealed to be significantly enhanced when excited with 325 nm excitation in the case of S vibrations, and with 455 nm in the case of Se vibrations. This behavior is explained by the interaction of the excitation photons with the corresponding S or Se electronic states in the conduction band, and further confirmed by first principles simulations. These findings advance the fundamental understanding of the coupling between the electronic transitions and photons in the case of Raman resonance effects, and provide inputs for further studies of lattice dynamics, especially in the case of chalcogenide materials. Additionally, the coexistence of modes corresponding to only S vibrations and only Se vibrations in the ZnSSe alloys makes these results applicable for the compositional assessment of ZnSSe compounds.

Graphical abstract: Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

Article information

Article type
Paper
Submitted
30 Jul 2015
Accepted
27 Aug 2015
First published
01 Sep 2015

Phys. Chem. Chem. Phys., 2016,18, 7632-7640

Author version available

Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

M. Dimitrievska, H. Xie, A. J. Jackson, X. Fontané, M. Espíndola-Rodríguez, E. Saucedo, A. Pérez-Rodríguez, A. Walsh and V. Izquierdo-Roca, Phys. Chem. Chem. Phys., 2016, 18, 7632 DOI: 10.1039/C5CP04498G

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