Issue 14, 2016

High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

Abstract

The need for a dedicated spectroscopic technique with nanoscale resolution to characterize SERS substrates pushed us to develop a proof of concept of a functionalized tip–surface enhanced Raman scattering (FTERS) technique. We have been able to map hot spots on semi-continuous gold films; in order to validate our approach we compare our results with photoemission electron microscopy (PEEM) data, the complementary electron microscopy tool to map hot spots on random metallic surfaces. Enhanced Raman intensity maps at high spatial resolution reveal the localisation of hotspots at gaps for many neighboring nanostructures. Finally, we compare our findings with theoretical simulations of the enhancement factor distribution, which confirms a dimer effect as the dominant origin of hot spots.

Graphical abstract: High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

Supplementary files

Article information

Article type
Paper
Submitted
28 Dec 2015
Accepted
03 Mar 2016
First published
04 Mar 2016

Phys. Chem. Chem. Phys., 2016,18, 9405-9411

High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy

C. Awada, J. Plathier, C. Dab, F. Charra, L. Douillard and A. Ruediger, Phys. Chem. Chem. Phys., 2016, 18, 9405 DOI: 10.1039/C5CP08015K

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