Issue 1, 2016

Fermi level, work function and vacuum level

Abstract

Electronic levels and energies of a solid, such as Fermi level, vacuum level, work function, ionization energy or electron affinity, are of paramount importance for the control of device behavior, charge carrier injection and transport. These levels and quantities, however, depend sensitively on the structure and surface morphology and chemical composition of the solid. A small amount of contaminants on a metal surface, or a shift in molecular orientation at the surface of an organic semiconductor, can change work function and vacuum level position by a large fraction of an electron-volt, and significantly impact the electronic structure of interfaces. The goal of this brief focus article is to provide definitions of key concepts and review simple mechanisms that affect these fundamental quantities.

Graphical abstract: Fermi level, work function and vacuum level

Article information

Article type
Focus
Submitted
03 Aug 2015
Accepted
08 Oct 2015
First published
13 Oct 2015

Mater. Horiz., 2016,3, 7-10

Fermi level, work function and vacuum level

A. Kahn, Mater. Horiz., 2016, 3, 7 DOI: 10.1039/C5MH00160A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements