Issue 10, 2015

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Abstract

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

Graphical abstract: Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Article information

Article type
Communication
Submitted
19 Jan 2015
Accepted
02 Feb 2015
First published
04 Feb 2015
This article is Open Access
Creative Commons BY license

Nanoscale, 2015,7, 4394-4399

Author version available

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

A. Gubicza, M. Csontos, A. Halbritter and G. Mihály, Nanoscale, 2015, 7, 4394 DOI: 10.1039/C5NR00399G

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