Issue 18, 2015
From the journal:

Nanoscale

High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells

L. Z. Hao,*a   W. Gao,a   Y. J. Liu,a   Z. D. Han,a   Q. Z. Xue,a   W. Y. Guo,a   J. Zhub  and  Y. R. Lib  

* Corresponding authors

a College of Science, China University of Petroleum, Qingdao, Shandong 266580, People's Republic of China
E-mail: haolanzhong@upc.edu.cn

b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
E-mail: yrli@upc.edu.cn

Abstract

A solar cell based on the n-MoS2/i-SiO2/p-Si heterojunction is fabricated. The device exhibits a high power-conversion efficiency of 4.5% due to the incorporation of a nano-scale SiO2 buffer into the MoS2/Si interface. The present device architectures are envisaged as potentially valuable candidates for high-performance photovoltaic devices.

Graphical abstract: High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells

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Article information

DOI
https://doi.org/10.1039/C5NR01275A
Article type
Communication
Submitted
25 Feb 2015
Accepted
09 Apr 2015
First published
13 Apr 2015

Nanoscale, 2015,7, 8304-8308

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High-performance n-MoS2/i-SiO2/p-Si heterojunction solar cells

L. Z. Hao, W. Gao, Y. J. Liu, Z. D. Han, Q. Z. Xue, W. Y. Guo, J. Zhu and Y. R. Li, Nanoscale, 2015, 7, 8304 DOI: 10.1039/C5NR01275A

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