Issue 17, 2015

Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates

Abstract

An SiO2/Si substrate has been widely used to support two-dimensional (2d) flakes grown by chemical vapor deposition or prepared by micromechanical cleavage. The Raman intensity of the vibration modes of 2d flakes is used to identify the layer number of 2d flakes on the SiO2/Si substrate, however, such an intensity is usually dependent on the flake quality, crystal orientation and laser polarization. Here, we used graphene flakes, a prototype system, to demonstrate how to use the intensity ratio between the Si peak from SiO2/Si substrates underneath graphene flakes and that from bare SiO2/Si substrates for the layer-number identification of graphene flakes up to 100 layers. This technique is robust, fast and nondestructive against sample orientation, laser excitation and the presence of defects in the graphene layers. The effect of relevant experimental parameters on the layer-number identification was discussed in detail, such as the thickness of the SiO2 layer, laser excitation wavelength and numerical aperture of the used objective. This paves the way to use Raman signals from dielectric substrates for layer-number identification of ultrathin flakes of various 2d materials.

Graphical abstract: Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates

Supplementary files

Article information

Article type
Paper
Submitted
08 Mar 2015
Accepted
30 Mar 2015
First published
01 Apr 2015

Nanoscale, 2015,7, 8135-8141

Author version available

Layer number identification of intrinsic and defective multilayered graphenes up to 100 layers by the Raman mode intensity from substrates

X. Li, X. Qiao, W. Han, Y. Lu, Q. Tan, X. Liu and P. Tan, Nanoscale, 2015, 7, 8135 DOI: 10.1039/C5NR01514F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements