Issue 26, 2015

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

Abstract

Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag2S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag2S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.

Graphical abstract: Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

Article information

Article type
Communication
Submitted
19 Apr 2015
Accepted
25 May 2015
First published
28 May 2015
This article is Open Access
Creative Commons BY license

Nanoscale, 2015,7, 11248-11254

Author version available

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

A. Gubicza, M. Csontos, A. Halbritter and G. Mihály, Nanoscale, 2015, 7, 11248 DOI: 10.1039/C5NR02536B

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