Issue 43, 2015

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

Abstract

We present results from an imaging study of filamentary conduction in silicon suboxide resistive RAM devices. We used a conductive atomic force microscope to etch through devices while measuring current, allowing us to produce tomograms of conductive filaments. To our knowledge this is the first report of such measurements in an intrinsic resistance switching material.

Graphical abstract: Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

Supplementary files

Article information

Article type
Communication
Submitted
24 Jul 2015
Accepted
07 Oct 2015
First published
14 Oct 2015
This article is Open Access
Creative Commons BY license

Nanoscale, 2015,7, 18030-18035

Author version available

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM

M. Buckwell, L. Montesi, S. Hudziak, A. Mehonic and A. J. Kenyon, Nanoscale, 2015, 7, 18030 DOI: 10.1039/C5NR04982B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements