Issue 2, 2016

The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures

Abstract

In this work, we introduce a series of two dimensional (2D) group IV chalcogenides (AX)2 with the building block X–A–A–X (A = Si, Ge, Sn, and Pb, and X = Se and Te) on the basis of ab initio calculations. The analysis of energy evaluation, lattice vibration as well as the chemical bonding demonstrate the good stability of these 2D materials. Furthermore, the pictures for the chemical bonding and electronic features of the 2D (AX)2 are drawn. Their narrow gapped semiconducting nature is unraveled. Especially, strong interactions between the electrons and phonons as well as the topological insulating nature in (SiTe)2 are observed. The present results indicate that such remarkable artificial 2D (AX)2 are building blocks for van der Waals heterostructure engineering, which shows potential applications in nanoscaled electronics and optoelectronics.

Graphical abstract: The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures

Article information

Article type
Paper
Submitted
05 Oct 2015
Accepted
24 Nov 2015
First published
26 Nov 2015

Nanoscale, 2016,8, 1169-1178

The development of two dimensional group IV chalcogenides, blocks for van der Waals heterostructures

B. Sa, Z. Sun and B. Wu, Nanoscale, 2016, 8, 1169 DOI: 10.1039/C5NR06871A

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