Transition metal doped pyrite (FeS2) thin films: structural properties and evaluation of optical band gap energies

Abstract

Iron pyrite (FeS₂) is a semiconductor comprised of earth-abundant elements and has the potential to be a low cost photovoltaic material with comparatively low toxicity. The properties of transition metal doped iron pyrite thin films (M_xFe_1−xS₂ where M = Co, Ni, Cu, or Zn) deposited by aerosol-assisted chemical vapour deposition (AACVD) on various substrates including glass, (100) silicon and indium tin oxide (ITO) have been studied. Changes in the cubic lattice parameter as well as peak broadening on doping were observed by powder X-ray diffraction (p-XRD) measurements. The structural properties of the transition metal doped pyrite (M_xFe_1−xS₂) depend strongly on the transition metal dopant used and preferred orientation in all films was found to be along the (200) plane. The influence of transition metal doping on the structure and phase transformation was significant in copper doped pyrite thin films. The height-profiling of M_xFe_1−xS₂ films with atomic force microscopy (AFM) displayed smooth surfaces with uniform distribution of particles. Optical studies revealed that there is increment in the bandgap of M_xFe_1−xS₂ thin films which is supported by previous work. There may be contribution from oxidation of the doped pyrite surface in band gap enhancement observed by X-ray photoelectron spectroscopy (XPS). These findings may be important to improve doped pyrite layers for photovoltaic devices.