Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

Chaochao Zhang; Jie Shang; Wuhong Xue; Hongwei Tan; Liang Pan; Xi Yang; Shanshan Guo; Jian Hao; Gang Liu; Run-Wei Li

doi:10.1039/C6CC00989A

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor†

Chaochao Zhang,‡^ab Jie Shang,‡^b Wuhong Xue,^b Hongwei Tan,^b Liang Pan,^b Xi Yang,^b Shanshan Guo,^b Jian Hao,*^a Gang Liu*^b and Run-Wei Li*^b

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^a Department of Chemistry, Shanghai University, Shanghai, P. R. China
E-mail: jhao@shu.edu.cn

^b Key Laboratory of Magnetic Materials and Devices, Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, P. R. China
E-mail: liug@nimte.ac.cn, runweili@nimte.ac.cn

Abstract

A bio-memristor fabricated with ferritin exhibits novel resistive switching characteristics wherein memory switching and threshold switching are made steadily coexistent and inter-convertible through controlling the magnitude of compliance current presets.

Chemical Communications

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor†

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Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

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