Issue 13, 2016

SiC7 siligraphene: a novel donor material with extraordinary sunlight absorption

Abstract

The SiC7 siligraphene (g-SiC7) is a novel 2D nanomaterial with a graphene-like structure. Based on theoretical calculations, we have systematically investigated the structure, stability, electronic and optical properties of g-SiC7 siligraphene. The calculated results reveal that g-SiC7 siligraphene is a semiconductor with a direct band gap of 1.13 eV, which can be easily tuned by applying biaxial strain or a perpendicular electric field. Such a g-SiC7 siligraphene shows superior sunlight optical absorbance and is better than g-SiC2 siligraphene and single-layer black phosphorus (phosphorene) in near infrared and visible photon ranges, thus holding great potential for photovoltaics applications as a light donor material.

Graphical abstract: SiC7 siligraphene: a novel donor material with extraordinary sunlight absorption

Supplementary files

Article information

Article type
Communication
Submitted
04 Jan 2016
Accepted
07 Mar 2016
First published
08 Mar 2016

Nanoscale, 2016,8, 6994-6999

SiC7 siligraphene: a novel donor material with extraordinary sunlight absorption

H. Dong, L. Zhou, T. Frauenheim, T. Hou, S. Lee and Y. Li, Nanoscale, 2016, 8, 6994 DOI: 10.1039/C6NR00046K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements