Issue 76, 2016

Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Abstract

Various doping levels of graphene on SiO2/Si substrates are reported in the literature. We show by in situ Raman spectroscopy that the heating of chemical vapor deposited graphene on SiO2/Si during the transfer process is the main factor causing this unintended doping of graphene samples. Large areas of graphene were analyzed using Raman spectroscopy, before and after the thermal treatment, to demonstrate that the effects of heating are spread throughout the graphene layer. The perturbations caused by the exposure of supported graphene during the first heating cycle (in vacuum) are irreversible, even though the samples were later in contact with the atmosphere. These results clarify deviations found in the Raman data obtained for transferred chemical vapor deposited graphene by different authors.

Graphical abstract: Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

Supplementary files

Article information

Article type
Paper
Submitted
26 Apr 2016
Accepted
26 Jul 2016
First published
26 Jul 2016

RSC Adv., 2016,6, 72859-72864

Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

S. D. Costa, J. E. Weis, O. Frank, M. Fridrichová and M. Kalbac, RSC Adv., 2016, 6, 72859 DOI: 10.1039/C6RA10764H

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